absolute maximum ratings www.irf.com 1 thermal resistance parameter max. units r ja maximum junction-to-ambient 70 c/w fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the new micro8 package, with half the footprint area of the standard so-8, provides the smallest footprint available in an soic outline. this makes the micro8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. micro8 all micro8 data sheets reflect improved thermal resistance, power and current -handling ratings- effective only for product marked with date code 505 or later . generation v technology ultra low on-resistance p-channel mosfet very small soic package low profile (<1.1mm) available in tape & reel fast switching v dss = -30v r ds(on) = 0.09 ? description top view 8 1 2 3 4 5 6 7 d d d g s a d s s parameter max. units v ds drain-source voltage -30 v i d @ t a = 25c continuous drain current, v gs @ -10v -3.6 i d @ t a = 70c continuous drain current, v gs @ -10v -2.9 a i dm pulsed drain current -29 p d @t a = 25c maximum power dissipation 1.8 w p d @t a = 70c maximum power dissipation 1.1 w linear derating factor 14 mw/c v gs gate-to-source voltage 20 v v gsm gate-to-source voltage single pulse tp<10s 30 v dv/dt peak diode recovery dv/dt -5.0 v/ns t j , t stg junction and storage temperature range -55 to + 150 c soldering temperature, for 10 seconds 240 (1.6mm from case)
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.4a, v gs = 0v t rr reverse recovery time ??? 43 64 ns t j = 25c, i f = -2.4a q rr reverse recovery charge ??? 50 76 nc di/dt = -100a/s source-drain ratings and characteristics -29
s d g parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.024 ??? v/c reference to 25c, i d = -1ma ??? 0.075 0.09 v gs = - 10v, i d = -2.4a 0.15 v gs = -4.5v, i d = -1.2a v gs(th) gate threshold voltage -1.0 ??? ??? v v ds = v gs , i d = -250a g fs forward transconductance 2.3 ??? ??? s v ds = -10v, i d = -1.2a ??? ??? -1.0 v ds = -24v, v gs = 0v ??? ??? -25 v ds = -24v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 20 30 i d = -2.4a q gs gate-to-source charge ??? 2.1 3.1 nc v ds = -24v q gd gate-to-drain ("miller") charge ??? 7.6 11 v gs = -10v, see fig. 9 t d(on) turn-on delay time ??? 13 ??? v dd = -10v t r rise time ??? 20 ??? i d = -2.4a t d(off) turn-off delay time ??? 43 ??? r g = 6.0 ? t f fall time ??? 39 ??? r d = 4.0 ? c iss input capacitance ??? 520 ??? v gs = 0v c oss output capacitance ??? 300 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 140 ??? ? = 1.0mhz, see fig. 8 electrical characteristics @ t j = 25c (unless otherwise specified)
? r ds(on) static drain-to-source on-resistance
notes: repetitive rating; pulse width limited by max. junction temperature. ( see fig. 10 ) i sd -2.4a, di/dt -130a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle 2%. surface mounted on fr-4 board, t 10sec.
www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical source-drain diode forward voltage 1 10 100 0.1 1 10 d ds 20s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 1 10 100 0.1 1 10 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 20s pulse width t = 150c j 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20s pulse width ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v)
4 www.irf.com fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage ! ( ? ) fig 5. normalized on-resistance vs. temperature ! ( ? ) 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -2.7a d
www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-ambient fig 9. typical gate charge vs. gate-to-source voltage fig 8. typical capacitance vs. drain-to-source voltage 0 200 400 600 800 1000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 5 10 15 20 25 30 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) v = -24v v = -15v ds ds for test circuit see figure 9 i = -2.7a d 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com package outline micro8 outline dimensions are shown in millimeters (inches) inches millimeters min max min max a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x notes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 controlling dimension : inch. 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x
www.irf.com 7 micro8 part marking information (old) part number 451 7501 top example : this is an irf7501 date code (yw w) y = last digit of year w w = week a micro8 part marking information (new) note: this part marking information applies to devices produced before 2/26/2001. note: this part marking information applies to devices produced after 2/26/2001. ww = (1-26) if pre cede d by l as t digit of cale ndar ye ar 01 02 03 04 24 w year y a 2001 1 b 2002 2 c 2003 3 d 1994 4 x 1999 0 ww = (27-52) if prece de d b y a le t te r we e k 27 28 29 30 50 w year a 2001 a b 2002 b c 2003 c d 1994 d x j 1995 1996 1997 1998 1999 2000 e f g h k y 1995 1996 1997 1998 2000 9 8 7 6 5 wor k we e k wor k 25 y 51 y 26 z 52 z part number example: this is an irf7501 dat e code (yw) y = year w = we e k lot code (xx) yww = 9532 = ef yww = 9503 = 5c dat e code e xample s :
8 www.irf.com tape & reel information micro8 dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. outline conforms to eia-481 & eia-541. 2. controlling dimension : millimeter. data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/02
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